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| (R) STTH806DTI Tandem 600V HYPERFAST BOOST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (typ) IRM typ.) trr (max) FEATURES AND BENEFITS 8A 600 V 150C 2.24 V 4A 13 ns 1 2 1 2 Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions Designed for high dI/dt operation. Hyperfast recovery current to compete with SIC devices. Allows downsizing of mosfet and heatsinks Internal ceramic insulated devices with equal thermal conditions for both 300V diodes Insulation (2500VRMS) allows placement on same heatsink as MOSFET and flexible heatsinking on common or separate heatsink Static and dynamic equilibrium of internal diodes are warranted by design Package capacitance: C=7pF Insulated TO-220AC DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj RMS forward voltage Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10ms sinusoidal = 0.15 Tc = 130C Parameter Repetitive peak reverse voltage Value 600 14 180 17 -65 to + 150 + 150 Unit V A A A C C Order Codes Part Number STTH806DTI Marking STTH806DTI June 2005 REV. 4 1/6 STTH806DTI THERMAL RESISTANCE Symbol Rth(j-c) Junction to case Parameter Value (max). 2.6 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Test conditions VR = VRRM 15 IF = 8A 1.95 Min. Typ Max. 10 100 3.6 2.4 V Unit A Reverse leakage current Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 150C Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF (RMS) 2 DYNAMIC CHARACTERISTICS Symbol trr IRM S Qrr Parameter Reverse recovery time Reverse recovery current Reverse recovery softness factor Reverse recovery charges Tj = 25C Test conditions IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = -50 A/s VR =30V Tj = 125C IF = 8A VR = 400V dIF/dt = -200 A/s 4 0.4 50 Min. Typ Max. Unit 13 30 5.5 A nC ns TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Forward recovery time Forward recovery voltage Tj = 25C Tj = 25C Test conditions IF = 8A dIF/dt = 100 A/s VFR = 1.1 x VFmax IF = 8A dIF/dt = 100 A/s Min. Typ Max. Unit 200 7 ns V 2/6 (R) STTH806DTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) = 0.05 = 0.1 = 0.2 = 0.5 100 Tj=125C (maximum values) P(W) 30 25 20 =1 Tj=125C (typical values) 15 10 Tj=25C (maximum values) 10 T 5 IF(AV)(A) 0 0 1 2 3 4 5 6 7 =tp/T 8 9 tp 1 10 VFM(V) 0 1 2 3 4 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 Fig. 4: Peak reverse recovery current versus dI F /dt (typical values). IRM(A) 9 8 VR=400V Tj=125C IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 0.8 = 0.5 7 6 0.6 5 4 = 0.2 = 0.1 0.4 3 T 2 0.2 Single pulse tp(s) 0.0 1E-3 1E-2 1E-1 =tp/T tp 1E+0 1 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 60 VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (typical values). Qrr(nC) 140 VR=400V Tj=125C 50 IF=2 x IF(AV) IF=IF(AV) 120 100 IF=2 x IF(AV) 40 IF=IF(AV) 80 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 30 60 20 40 10 20 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 0 0 100 dIF/dt(A/s) 200 300 400 500 (R) 3/6 STTH806DTI Fig. 7: Softness factor versus dIF/dt (typical values). S 0.6 0.5 0.4 0.3 0.2 0.1 IF<2xIF(AV) VR=400V Tj=125C Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj= 125C). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 IRM S IF=IF(AV) VR=400V Reference: Tj=125C dIF/dt(A/s) 0.0 0 50 100 150 200 250 300 350 400 450 500 0.2 0.0 25 50 Tj(C) 75 100 125 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Fig. 10: Forward recovery time versus dIF/dt (typical values). tfr(ns) 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125C IF=IF(AV) Tj=125C dIF/dt(A/s) 50 100 150 200 250 300 350 400 450 500 20 0 0 100 dIF/dt(A/s) 200 300 400 500 4/6 (R) STTH806DTI PACKAGE MECHANICAL DATA Insulted TO-220AC REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.066 4.95 5.15 0.194 0.202 10.00 10.40 0.393 0.409 16.40 typ. 0.645 typ. 13.00 14.00 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.20 6.60 0.244 0.259 3.50 3.93 0.137 0.154 2.6 typ. 0.102 typ. 3.75 3.85 0.147 0.151 H2 C L5 OI L6 L2 D A L7 L9 F1 L4 F G M E A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I ORDERING INFORMATION Ordering type STTH806DTI Marking STTH806DTI Package Insulated TO-220AC Weight 1.90 g Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 m.N. Maximum torque value: 0.70 m.N. Date Oct-2003 May-2004 29-Jun-2005 Revision 2A 3 4 Initial release Reformatted Corrections to typographical errors. No technical changes. Changes (R) 5/6 STTH806DTI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 6/6 (R) |
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